Potential of point-contacting by localized dielectric breakdown technique for formation of rear point contact arrays in silicon solar cells

摘要

The Point-contacting by Localized Dielectric Breakdown technique is a potential pathway for the formation of point contact arrays at the rear surface of silicon solar cells at room temperature. An abrupt change in resistance of test structures occurs during an IV sweep when dielectric breakdown is induced exclusively at laser doped point contact regions. The distribution of the breakdown field has been found to be consistent with dielectric failure being the cause of the formation of contacts. Some of the promising results for contact resistivity and effective lifetime are presented, highlighting the potential for application in a high efficiency industrial solar cell.