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Nanotextured solar cells using aluminum as a catalyst and dopant

机译:使用铝作为催化剂和掺杂剂的纳米纹理太阳能电池

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A black silicon solar cell fabricated using aluminum as both a catalyst and dopant is demonstrated. A nanowireanopyramid black silicon surface texture is grown via aluminum (Al)-catalyzed vapor-liquid-solid growth, and post-growth annealing diffuses the aluminum into the n-type substrate, forming a p-n junction. Devices with nanopyramid surface textures are found to have higher short-circuit currents and open-circuit voltages than nanowire surface textures grown at lower temperatures, and post-growth annealing times of 15-30 minutes are found to promote higher short-circuit current densities. External quantum efficiency measurements show that the highest photoconversion occurs in the red and IR regions for all devices, with low quantum efficiencies at shorter wavelengths even when the p-type silicon surface is passivated with alumina. The quantum efficiency spectra imply that the devices are limited by recombination on the illuminated side of the device. Based on these results and previous data on Al-catalyzed wires and pyramids, excess Al incorporation and Al cluster formation in the emitter are suggested as the primary factors currently limiting device performance.
机译:对使用铝作为催化剂和掺杂剂制造的黑硅太阳能电池进行了说明。纳米线/纳米金字塔黑硅表面纹理是通过铝(Al)催化的气液固增长生长的,生长后退火将铝扩散到n型衬底中,形成p-n结。发现具有纳米金字塔表面纹理的器件比在较低温度下生长的纳米线表面纹理具有更高的短路电流和开路电压,并且发现15-30分钟的生长后退火时间可促进更高的短路电流密度。外部量子效率测量结果表明,对于所有器件,最高的光转换发生在红色和IR区域,即使在p型硅表面被氧化铝钝化的情况下,在较短波长下量子效率也很低。量子效率谱表明,该器件受器件受光侧的重组的限制。根据这些结果以及有关Al催化的金属丝和金字塔的先前数据,建议在发射极中过量的Al掺入和Al团簇形成是当前限制器件性能的主要因素。

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