Impact of spintronics transducers on the performance of spin wave logic circuit

摘要

We propose a comprehensive scheme for building spintronics transducers for back and forth signal conversion between spin and charge domains in addition to the associated CMOS peripheral circuitry for spin wave device (SWD) circuits. We perform systematic analysis of the impact of the transducers on the performance of SWD in terms of energy and area overhead. Performance evaluation of SWD compared with 7nm FinFET CMOS technology at the circuit level, yields a 3× smaller area and an order of magnitude lower energy-delay product (EDP) for large complex circuits with low overhead. Overall, SWD outperforms CMOS with increasing ratio of (logic size/overhead).