Due to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great retention and switching speed, but still poor controllability. To this end, in this work we use one-dimensional (1-D) networks of anti-serially connected threshold-type memristors, as means to create voltage-controlled ternary memristive switches (TMS). We demonstrate that the number of memristors and their polarity define the memristance corresponding to the different stored information. We present a simulation-based study of their performance using a threshold-type switching model of bipolar voltage-controlled memristors, and comment on the applied programming-pulse characteristics and the most important device-level properties.
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