Microwave effective and bulk surface impedance of thin FeSe0.3Te0.7 film

摘要

After the discovery of superconductivity in the Fe-based pnictide compound LaFeAsO1−xF (“1111”), which has stimulated a great scientific interest [1], the finding of superconductivity in binary As-free Fechalcogenide (“11”) is of especially great interest, since it only contains the FeSe-layer, which has an identical structure as FeAs, and the Se deficiency may be the reason of the superconductivity [2]. By introducing Te, the critical temperature in FeSexTe1−x can be increased. This system is convenient because the doping can be well controlled [3].