Performance degradation of Si device with the change of carrier lifetime under laser irradiation

摘要

In the paper, the performance of Si devices with change of carrier lifetime was reported with finite volume method. In the two-dimensional axisymmetric semiconductor model, which was based on Si p-n junction structure. Direct recombination, auger recombination and the SRH (Shockley-Ready-Hall) recombination were taken into consideration. Both cathode and anode was made via ohmic contact. Both p~+-n or n~+-p type devices were built accordingly. The 1064 nm laser was used as signal in the model. Numerical simulation had been studied with different voltage and carrier lifetime. It was found that the device performance was affected by the minority carrier lifetime obviously. It also inferred that the performance of Si devices was degenerated by laser indirectly.