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Degradation of Cu-Al wire bonded contacts under high current and high temperature conditions using in-situ resistance monitoring

机译:使用原位电阻监测在高电流和高温条件下降解Cu-Al引线键合触点

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To evaluate the dynamics of Cu-Al bond contact degradation, the evolution of the intermetallic electrical interface resistance was monitored in-situ in a test device exposed to high temperatures (140 to 200°C) while conducting high current densities (7.0 × 10 to 4.5 × 10 A/cm). The degradation is quite different from what is known for Au-Al contacts. The influence of different stimuli like current direction, current density, temperature, and temperature gradients is studied and discussed. On top of that the dynamics in relation to material properties is assessed in detail from which the concept of an incubation time until IMC degradation starts is proposed.
机译:为了评估Cu-Al键接触退化的动力学,在暴露于高温(140至200°C),同时进行高电流密度(7.0×10至10 4.5×10 A / cm)。退化与已知的Au-Al接触完全不同。研究并讨论了电流方向,电流密度,温度和温度梯度等不同刺激的影响。最重要的是,详细评估了与材料特性有关的动力学,从中提出了直到IMC降解开始的孵育时间的概念。

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