Optimization of GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection

机译：用于毫米波检测的GaAsSb / InAlAs / InGaAs隧道二极管的优化

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We evaluated optimal voltage sensitivity (S) and noise equivalent power (NEP) of GaAsSb/InAlAs/InGaAs tunnel diode detectors in 220-330 GHz band at room temperature. The NEP values have strong dependence on the diode mesa size. With increasing the device area from 0.8×0.8μm to 1.4×1.4μm, the estimated minimum NEP improved from 200pW/Hz to 80pW/Hz.

机译：我们评估了室温下220-330 GHz频带内GaAsSb / InAlAs / InGaAs隧道二极管探测器的最佳电压灵敏度（S）和噪声等效功率（NEP）。 NEP值强烈依赖于二极管台面尺寸。随着器件面积从0.8×0.8μm增加到1.4×1.4μm，估计的最小NEP从200pW / Hz提高到80pW / Hz。

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《International Conference on Infrared, Millimeter, and Terahertz Waves》|2015年|1-1|共1页
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Patrashin Mikhail; Sekine Norihiko; Kasamatsu Akifumi; Watanabe Issei; Hosako Iwao; Takahashi Tsuyoshi; Sato Masaru; Nakasha Yasuhiro; Hara Naoki;
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III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave detectors; millimetre wave diodes; tunnel diodes; GaAsSb-InAlAs-InGaAs; NEP; diode mesa size; frequency 220 GHz to 330 GHz; millimeter wave detection; noise equivalent power; optimal voltage sensitivity evaluation; tunnel diode detector optimisation; Current measurement; Indium gallium arsenide; Junctions; Resistance; Sensitivity; Voltage measurement;

机译：III-V型半导体;铝化合物;砷化镓;铟化合物;毫米波检测器;毫米波二极管;隧道二极管; GaAsSb-InAlAs-InGaAs; NEP;二极管台面尺寸;频率220 GHz至330 GHz;毫米波检测;噪声等效功率;最佳电压灵敏度评估;隧道二极管检测器优化;电流测量;砷化铟镓;结;电阻;灵敏度;电压测量;

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专利

1. GaAsSb/InAlAs/InGaAs Tunnel Diodes for Millimeter Wave Detection in 220–330-GHz Band [J] . Patrashin Mikhail, Sekine Norihiko, Kasamatsu Akifumi, Electron Devices, IEEE Transactions on . 2015,第3期

机译：用于220-330 GHz频段毫米波检测的GaAsSb / InAlAs / InGaAs隧道二极管
2. High Frequency Performance of GaAsSb/InAlAs/InGaAs Tunnel Diodes [J] . Mikhail PATRASHIN, Norihiko SEKINE, Akifumi KASAMATSU, 電子情報通信学会技術研究報告 . 2012,第364期

机译：GaAsSb / InAlAs / InGaAs隧道二极管的高频性能
3. High Frequency Performance of GaAsSb/InAlAs/InGaAs Tunnel Diodes [J] . Mikhail PATRASHIN, Norihiko SERINE, Akifumi KASAMATSU, 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2012,第364期

机译：GaAsSb / InAlAs / InGaAs隧道二极管的高频性能
4. Optimization of GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection [C] . Patrashin Mikhail, Sekine Norihiko, Kasamatsu Akifumi, International Conference on Infrared, Millimeter, and Terahertz Waves . 2015

机译：Gaassb / Inalas / Ingaas隧道二极管优化用于毫米波检测
5. InGaAs/InAlAs quantum wells for 1.3 micron electro-absorption modulators on GaAs substrates. [D] . Shen, Lei. 1997

机译：GaAs衬底上用于1.3微米电吸收调制器的InGaAs / InAlAs量子阱。
6. InGaAs/InAlAs single photon avalanche diode for 1550 nm photons [O] . Xiao Meng, Shiyu Xie, Xinxin Zhou, 2016

机译：用于1550nm的光子的InGaAs / InAlAs单光子雪崩二极管
7. New tunnel diode for zero-bias direct detection for millimeter-wave imagers [O] . Edward T. Croke, Joel N. Schulman, David H. Chow, 2001

机译：<标题>用于零偏置直接检测毫米波成像的新隧道二极管
8. Millimeter-Wave Detection Using Resonant Tunnelling Diodes [R] . Mehdi, I., Kidner, C., East, J. R., 1990

机译：使用谐振隧道二极管的毫米波检测

Optimization of GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection

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