QUALITY ESTIMATION OF N-MONO WAFERS IN SILICON HETEROJUCTION SOLAR CELLS USING PHOTOLUMINESCENCE IMAGING

摘要

Silicon heterojunction (SHJ) solar cells have potential to achieve high efficiencies. Among many process parameters, wafer quality plays an important role in determining the efficiency of a solar cell. The correlation between wafer quality and cell performance was investigated. The wafers in the top, middle, and bottom parts of each ingot were taken and tested. The results from JV-curve measurements revealed that the decreased efficiencies may be due to ambiguous and dark edges of cells shown in photoluminescence imaging, indicating low quality of wafers. After optimizing cell process with a fine quality of wafer, SHJ solar cell on a 6 inch n-mono wafer with a conversion efficiency of 23.43 % was achieved by AUO HJ-RD team.