Transient temperature measurement of amorphous silicon thin films during excimer laser annealing

摘要

The excimer laser annealing of amorphous silicon thin films has been investigated via optical diagnostics. Amorphous silicon films of 50 nm thickness are used in laser annealing. To obtain the transient temperature variation in the laser annealing process, the thermal emission and near-IR optical properties are measured. The front transmissivity and reflectivity are measured to obtain the emissivity at the 1.52 $mu@m wavelength of the probe IRHeNe laser. Significant undercooling of the liquid silicon is observed during the cooling stage. The emissivity is almost constants during the melting period, but increases during the melting and solidification transformations.