Anti-Single-Event Technology Based on the Novel Hole-Current Diversionary Structure

摘要

In order to improve the anti-single-event ability of the rad-hard power MOSFET, a novel charge balance structure in the drift region is designed, which generates an additional electric field that can expand the distribution of transient large currents generated by heavy particles, and the guided hole current flows out of the device from non-sensitive area. Based on the novel drift region charge balance structure, the structural process design of the anti-irradiation 600V power MOSFET is completed, the simulation and experimental results show that the electrical performance parameters of the device achieves the basic request, and the performance of anti-single-event irradiation is significantly improved compared with the traditional structure.