Electrical properties of 2,6-bis(5#x2032;-hexyl-2,2#x2032;-bithiophene-5-yl) naphthalene organic transistors: Effect of preparation conditions

摘要

Organic field-effect transistors (OFETs) based on solution-processable organic semiconductors have experienced wide range of applications. Here we report fabrication, structure, and electrical properties of 2,6-bis(5′-hexyl-2,2′-bithiophen-5-yl)naphthalene (H2T26N) OFETs. The high-temperature tilt-casting has been used for preparation of giant grains up to 300 µm. Film structure as well as effective mobilities has been found dependent on fabrication temperature, while the threshold voltage was conserved. Electrical properties are discussed accordance to the film structure and compared with other common solution-processable organic semiconductors.