Self-consistent quasi static CV characterization of InxGa1#x2212;xSb buried channel n-MOSFET

摘要

The quasi-static capacitance-voltage (CV) characteristics of buried channel n-InGaSb MOSFET is investigated using SILVACO's ATLAS device simulation package. Self-consistent method is applied to solve the coupled one dimensional Schrödinger-Poisson equation taking into account of wave function penetration and strain effect. It is found that the CV profiles and threshold voltage are strongly depended on some important process parameters like oxide thickness, channel thickness, channel composition and temperature for buried channel InGaSb n-MOSFET.