TCAD — Simulation of the complementary bipolar pair of transistors

摘要

In this paper we consider the numerical simulation TCAD Sentaurus of the vertical NPN and PNP transistors fabricated on complementary bipolar technology with a P-epitaxial layer. As a result, technological parameters associated with the buried and epitaxial layers have been defined. These parameters have provided the required voltage value of collector-emitter breakdown. The comparison of the transistor output characteristics with the experimental data has showed the adequate accuracy of simulation for practical use.