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Emission Mechanism of High Current Density Thermionic Cathodes

机译:高电流密度热阴极的排放机理

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In this paper, the research on the emission performance and the nonuniform emission of M-type cathode, impregnated scandate cathode, oxide cathode, and novel scandia-doped dispenser cathode are mentioned, the factors affecting the emission uniformity are discussed. The cathode's normal and abnormal "Schottky" phenomena in the case of high current density are also involved in by the ways of Miram curves and practical work function distribution (PWFD). According to the research results and experimental data, the authors proposed the "semiconductor-monolayer superposition" emission model, which is suitable for all kinds of thermionic cathode on the basis of barium-emission mechanism. It means Richardson-Dushman equation introduced from the phenomenon of pure metal emission is suitable for barium-tungsten cathode of monolayer emission mechanism (including M-type, mixed matrix, and reservoir cathode, etc). Though the semiconductor model based on traditional oxide cathode is not so perfect, it is still presumed suitable for the oxide cathode. As for the emission mechanism of all the kinds of scandate cathodes (no matter impregnated scandate, top-layer scandate or scandia-doped tungsten matrix, etc) are between the types of "semiconductor" and "monolayer" - a kind of superposition of semiconductor and monolayer models. No matter oxide cathode, barium tungsten cathode (M-type cathode) or scandate cathode can be explained by the model of "semiconductor and monolayer superposition", and the "field assistance thermionic emission" mechanism decides the main factors leading to emission high or low and normal/abnormal "Schottky" effect. Essentially, barium tungsten cathode (including M-type, mixed matrix, and reservoir cathode, etc), which is typical thermionic emission, almost follows the pure metal thermionic emission formula. Therefore, the normal "Schottky effect" exists. However, the oxide cathode and all kinds of scandate cathodes (including impregnated, mixed pressed, top-layer or scandia-doped tungsten matrix) are greatly influenced by the field penetration, especially under the condition of delivering high current density. It is considered as "field-assistance thermionic emission". An obvious emission characteristic is that the work function decreasing with current density (or applied voltage) increasing. The authors predicted that a new kind of emitter (perhaps covering improved oxide and scandate cathode) exists between the ways of "field assistance thermionic emission" and "thermal assistance field emission". This kind of emitters should have better emission capability under low temperature than usual thermionic cathode and can sustain more awful environment than field emission array cold cathode. Moreover, its emission characteristics on high current density don't follow either the Richardson-Dushman equation or the existing Fowler-Nordheim equation. The equation that can explain this kind of novel cathode emission characteristics coupling both thermal effect and field effect must be modified formula which includes field assistance and/or thermal assistance effect.
机译:本文讨论了对M型阴极,浸渍钪酸盐阴极,氧化物阴极,氧化钪掺杂分配器阴极的发射性能和非均匀排放的研究,讨论了影响发射均匀性的因素。通过MIRAM曲线和实际工作功能分布(PWFD)的方式,阴极的正常和异常“肖特基”现象也涉及高电流密度。根据研究结果和实验数据,作者提出了“半导体单层叠加”发射模型,其适用于基于钡排放机制的各种热离子阴极。它意味着从纯金属发射现象引入的Richardson-Dushman方程适用于单层发射机构(包括M型,混合基质和贮存器阴极等)的钡 - 钨阴极。虽然基于传统氧化物阴极的半导体模型不是那么完美,但仍然被假定适用于氧化物阴极。至于所有种类的钪酸盐阴极的排放机理(无论浸渍钪酸盐,顶层钪酸盐或鳞片掺杂的钨基质等)都在“半导体”和“单层”的类型之间 - 一种半导体叠加和单层模型。无论是氧化物阴极,碳钡阴极(M型阴极)或钪酸盐阴极都可以通过“半导体和单层叠加”的模型来解释,“野外辅助热量发射”机制决定导致发射高或低的主要因素和正常/异常“肖特基”效果。基本上,是典型的热离子发射的碳酸钡阴极(包括M型,混合基质和储层阴极等)几乎跟随纯金属热离子发射式。因此,存在正常的“肖特基效应”。然而,该氧化物阴极和各种钪酸盐阴极的(包括浸渍,混合压制,顶层或钪掺杂钨矩阵)被大大由场渗透的影响,特别是提供高电流密度的条件下进行。它被认为是“现场辅助热离子发射”。明显的发射特性是功函数随着电流密度(或施加电压)增加而降低。作者预测,在“现场辅助热离子发射”和“热辅助场排放”的方式之间存在一种新的发射器(可能覆盖改善的氧化氧化物和钪酸盐阴极)。这种发射器应在低温下具有比通常的热太极阴极更好的排放能力,并且可以维持比场发射阵列冷阴极更可怕的环境。此外,其高电流密度的排放特性不遵循Richardson-Dushman方程或现有的Fowler-Nordheim方程。可以解释这种新型阴极发射特性耦合热效应和场效应的等式必须是改进的公式,包括现场辅助和/或热辅助效果。

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