Comparative analysis of the thermal resistance profiles of power light-emitting diodes cree and rebel types

机译：功率发光二极管Cree和Rebel类型的热阻曲线的比较分析

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Analysis of the thermal resistance of power light-emitting diodes (LEDs) of Cree and Rebel types is developed. Components of the thermal resistance of the diodes are determined and several distinguishes between different methods are obtained. Behavior of bottleneck effect related to definite interfaces is established. The value of LED active junction area is evaluated too.

机译：对Cree和Rebel类型的功率发光二极管（LED）的热阻进行了分析。确定二极管的热阻分量，并获得不同方法之间的几种区别。建立了与确定接口有关的瓶颈效应的行为。 LED有源结区域的值也将被评估。

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《International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems》|2013年|1-7|共7页
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Zakgeim A.L.; Chernyakov A.E.; Vaskou A.S.; Kononenko V.K.;
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Comparative analysis of the thermal resistance profiles of power light-emitting diodes cree and rebel types

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