High performance optoelectronics based on CVD Mos2

摘要

Transition metal dichalcogenides (TMDs) are regarded as promising nano materials for next generation electronics and optoelectronics due to their ultrathin body nature and excellent transport properties. Here, single crystal growth of monolayer Mos₂ has been realized by controllable atmosphere pressure chemical vapor deposition (APCVD) method. The high-quality of Mos₂ grown directly on SiO₂/Si substrate has been demonstrated by various material characterization methods. The fabricated optoelectronic device shows prominent photoresponse within a broadband spectrum range and a wide optical power range by taking advantage of the Schottky contact at source/drain electrodes. As a result, high photoresponsivity of 3×10^{4 A/W as well as high photodetectivity up to 7×1012 Jones have been achieved.}