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Development of ultra-violet sensing devices with zinc-oxide thin-films on oxidized nano-porous-silicon substrates

机译:在氧化的纳米多孔硅衬底上开发具有氧化锌薄膜的紫外线传感设备

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This paper demonstrated the deposition of zinc oxide (ZnO) thin films on oxidized nano-porous-Si (ONPS) substrates. Ultra-violet (UV) sensing devices based on the developed ZnO films had been fabricated and exhibited high photo-responsivity for 300∼400-nm incident UV light. The ZnO-on-ONPS devices got a large photo-to-dark current ratio up to 104 at an incident wavelength of 375 nm, indicating their high potential for development of low-cost UV photodetectors.
机译:本文证明了氧化锌(ZnO)薄膜在氧化的纳米多孔硅(ONPS)衬底上的沉积。已经制造了基于已开发的ZnO薄膜的紫外线(UV)传感设备,并且对300-400 nm的入射UV光表现出高的光响应性。 ZnO-on-ONPS器件在375 nm的入射波长下具有高达104的大光暗电流比,这表明它们具有开发低成本UV光电探测器的巨大潜力。

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