Approach on Electrostatic Discharge protection structures based on Transient Voltage Suppressor diodes

摘要

The authors aim to demonstrate the benefits of using the Transient Voltage Suppressor diodes to enhance the immunity of MOSFET Integrated Circuits versus Electrostatic Discharge effects. There were used Transient Voltage Suppressor diodes as protection elements, with passive elements for signal filtering and protection against higher current magnitude. For biasing the protection structure it was used a PMOS/NMOS tandem with filtering passive elements.