Prospect of InGaAsN solar cells grown by chemical beam epitaxy for high-efficiency multi-junction solar cells

摘要

Material properties of chemical-beam-epitaxy-grown III-V-N materials have been studied extensively in the past few years as a candidate of 1-eV junction in a multi-junction device. In this paper, we present theoretical modeling results to evaluate the criteria of how to achieve high-efficiency multi-junction solar cells using this material. Then, we will review and summarize the recent research progress of this material within this theoretical modeling framework to show how these criteria may be achieved.