Substrate-type Cu(In, Ga)Se2 solar cells with all layers deposited by non-vacuum solution-based methods

摘要

Cu(In, Ga)Se2 (CIGS) solar cells with all layers deposited using solution-based methods were demonstrated in order to investigate the utilization of wet process in CIGS photovoltaic cell fabrication. An active area efficiency of 7.7% was obtained. On the other hand, the highest efficiency of the cells with solution-processed CIGS and CdS layers was 15.3 %, which was about twice higher than that of all wet-coated cells. It was revealed that the quality of the ZnO nanoparticle layer, a lack of Na in the CIGS layer and the sheet resistance of SnO2:F back electrode limited the cell performance.