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Mitigation of Very Fast Transient Overvoltages in Gas Insulated UHV Substations

机译:气体绝缘特高压变电站中非常快速的瞬态过电压的缓解

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Before starting the design of a UHV substation, it has to be clarified whether very fast transientovervoltages (VFTO) have significant influence on the insulation co-ordination. The decision shall bebased on the maximum VFTO peak value that occurs with reference to the rated lightning impulsewithstand voltage (LIWV) of the equipment. If the maximum VFTO is below the LIWV, no measuresneed to be taken. Otherwise it is necessary to design considering the VFTO level as dimensioningcriteria or to suppress VFTO by damping devices.For the different sources of VFTO and for the different equipment many mitigation methods areknown. The damping of VFTO by integration of a damping resistor is one proven technology. Theway to overcome the drawback of such unwieldy design is to use other internal damping measuressuch as ferrite or high frequency (HF) resonators. The VFTO damping solution utilizing ferrite ringshas been analyzed and tested and is described here. The measurements show that the damping effectcan be achieved, but with an important drawback: the magnetic material goes easily into saturation,which complicates the design and reduces its general applicability and robustness.A new approach for damping is to implement compact electromagnetic high-frequency resonators withlow quality factor specially designed to cover a wider frequency range. The novelty of this idea is notonly in designing the resonators but also in dissipating the received VFTO energy by intentionallyallowing sparking to occur within the electrically shielded gap of the resonator. The time-domain andfrequency-domain method for the analysis of the HF resonators was used for the simulation. TheVFTO damping effect of the developed HF resonator tuned to the dominant harmonic component wasconfirmed by experiments.The maximum value of the VFTO depends on the voltage drop at the disconnector switch (DS) justbefore striking along with the specific location. Trapped charge remaining on the load side of the DSmust be taken into consideration. By using a new VFT disconnector model, it is possible to evaluatethe trapped charge characteristic and the entire switching process. The trapped charge voltage (TCV)behaviour strongly depends on the contact speed. A lower contact speed results in a lower TCV andprovides an additional safety margin compared to the calculation based on a trapped charge voltage of-1 pu. For the insulation co-ordination this additional margin has to be considered.
机译:在开始设计特高压变电站之前,必须弄清楚是否有非常快速的瞬变 过电压(VFTO)对绝缘配合有重要影响。该决定应为 基于参考额定雷电脉冲出现的最大VFTO峰值 设备的耐压(LIWV)。如果最大VFTO低于LIWV,则不采取任何措施 需要采取。否则,有必要在设计时考虑VFTO级别的尺寸 准则或通过阻尼装置抑制VFTO。 对于VFTO的不同来源和设备,许多缓解方法是 众所周知。通过集成阻尼电阻来阻尼VFTO是一项成熟的技术。这 克服这种笨拙设计缺点的方法是使用其他内部阻尼措施 例如铁氧体或高频(HF)谐振器。利用铁氧体环的VFTO阻尼解决方案 已经过分析和测试,并在此处进行说明。测量结果表明阻尼效果 可以实现,但有一个重要的缺点:磁性材料很容易进入饱和状态, 这使设计变得复杂,并降低了其总体适用性和鲁棒性。 一种新的阻尼方法是实现紧凑的电磁高频谐振器 专门设计用于覆盖更宽频率范围的低品质因数。这个想法的新颖性不是 不仅在设计谐振器方面,而且还通过有意地耗散接收到的VFTO能量 允许在谐振器的电屏蔽间隙内发生火花。时域和 仿真中使用了频域方法来分析HF谐振器。这 已开发的高频谐振器的VFTO阻尼效应已调谐至主要谐波分量 经实验证实。 VFTO的最大值取决于隔离开关(DS)上的电压降 在敲击特定位置之前。残留在DS负载侧的电荷 必须考虑在内。通过使用新的VFT隔离开关模型,可以评估 捕获的电荷特性和整个开关过程。陷获充电电压(TCV) 行为在很大程度上取决于接触速度。较低的接触速度会导致较低的TCV和 与基于捕获的电荷电压的计算相比,提供了额外的安全裕度 -1蒲。对于绝缘配合,必须考虑额外的余量。

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