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Potential Profile Measurement and Mechanism Analysis of Electrostatic Latent Image by Detecting Primary Electrons

机译:通过检测一次电子对静电潜像进行电位分布测量和机理分析

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A new method that makes possible a potential-profile measurement of an electrostatic latent image is proposed. The key technology is to detect a primary electron. When a surface potential is greater than acceleration voltage of the primary electron, the velocity becomes zero before the electron hits a sample. As a result, the primary electron reaches to a detector without reaching the sample. The potential distribution can be measured by detecting primary electrons while changing an applied voltage of a backside. This method is that the means of charging, exposing, and detecting are all incorporated in the same system, making real-time measurement possible. This system is being used to analyze the basis of an electrostatic latent image formed on a photoconductor. In order to confirm a phenomenon of reciprocity law failure, the latent-image depth was measured by changing the delay time when exposure was carried out a couple of times. As a result, the latent-image depth tends to be formed deep when the delay time becomes long.
机译:提出了一种使静电潜像的电位分布测量成为可能的新方法。关键技术是检测一次电子。当表面电势大于一次电子的加速电压时,在电子撞击样品之前,速度变为零。结果,一次电子到达检测器而没有到达样品。可以通过在改变背面的施加电压的同时检测一次电子来测量电势分布。这种方法是将充电,曝光和检测手段全部集成在同一系统中,从而可以进行实时测量。该系统用于分析在光电导体上形成的静电潜像的基础。为了确认互易定律失败的现象,通过改变两次曝光的延迟时间来测量潜像深度。结果,当延迟时间变长时,潜像深度倾向于形成得较深。

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