首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >ONE-STEP ELECTROCHEMICAL DEPOSITION OF CU-IN-GA MIXED OXIDE THIN FILMS FOR LOWCOST CIGS SOLAR CELLS
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ONE-STEP ELECTROCHEMICAL DEPOSITION OF CU-IN-GA MIXED OXIDE THIN FILMS FOR LOWCOST CIGS SOLAR CELLS

机译:低成本CIGS太阳能电池的Cu-in-GA混合氧化物薄膜的一步法电化学沉积

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One step electrodeposition of mixed copper indium gallium oxides and hydroxides film has beencarried out by cathodic deposition from dissolved metallic salts in nitrate electrolyte. The deposition conditions allowto control the composition of the film and the proportion of metallic elements in the optimal range for CIGS. Theprecursor films are then reduced into mixed metallic film by thermal annealing in an hydrogen containing atmosphereand then transformed in CIGS by selenization with elemental selenium. Cell efficiency of 9.4% has been obtainedwith this process.
机译:一步法电沉积混合的铜铟镓氧化物和氢氧化物膜 通过硝酸盐电解质中溶解的金属盐的阴极沉积进行。沉积条件允许 以控制薄膜的成分和金属元素的比例,使其在CIGS的最佳范围内。这 然后在含氢气氛中通过热退火将前体膜还原为混合金属膜 然后通过硒元素硒化转化为CIGS。电池效率达到9.4% 这个过程。

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