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Electrical Degradation Behavior of a-InGaZnO Thin-Film Transistors with Sm_2O_3 Gate Dielectrics

机译：具有Sm_2O_3栅极电介质的a-InGaZnO薄膜晶体管的电降解行为

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摘要

We investigate the electrical degradation behavior in amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) with Sm_2O_3 gate dielectrics. The negative shift of threshold voltage in Sm_2O_3 a-IGZO TFTs can be attributed to the generation of extra electrons from oxygen vacancies in the a-IGZO channel.

机译：我们调查具有Sm_2O_3栅极电介质的非晶InGaZnO（a-IGZO）薄膜晶体管（TFT）中的电降解行为。 Sm_2O_3 a-IGZO TFT中阈值电压的负移可以归因于a-IGZO通道中氧空位产生的多余电子。

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来源
《International display workshops》|2012年|399-400|共2页
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Fa-Hsyang Chen; Jian-Hung Liu; Somnath Mondal; Bang-Li Wu; Tung-Ming Pan;
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a-InGaZnO; TFT; Sm_2O_3; and reliability;

机译：a-InGaZnO; TFT; Sm_2O_3;和可靠性;

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专利

1. Investigation of tow-step electrical degradation behavior in a-InGaZnO thin-film transistors with Sm_2O_3 gate dielectrics [J] . Fa-Hsyang Chen, Jim-Long Her, Meng-Ning Hung, Applied Physics Letters . 2013,第3期

机译：具有Sm_2O_3栅极电介质的a-InGaZnO薄膜晶体管的两步电降解行为研究
2. Self-Heating-Effect-Induced Degradation Behaviors in a-InGaZnO Thin-Film Transistors [J] . Hsieh T.-Y., Chang T.-C., Chen T.-C., Electron Device Letters, IEEE . 2013,第1期

机译：a-InGaZnO薄膜晶体管中的自热效应引起的退化行为
3. Impact of Ti doping in Sm2O3 dielectric on electrical characteristics of a-InGaZnO thin-film transistors [J] . Chen Fa-Hsyang, Her Jim-Long, Mondal Somnath, Applied Physics Letters . 2013,第19期

机译：Sm2O3介质中Ti掺杂对a-InGaZnO薄膜晶体管电学特性的影响
4. Electrical Degradation Behavior of a-InGaZnO Thin-Film Transistors with Sm_2O_3 Gate Dielectrics [C] . Fa-Hsyang Chen, Jian-Hung Liu, Somnath Mondal, International display workshops . 2012

机译：具有SM_2O_3栅极电介质的A-Ingazno薄膜晶体管的电解性能
5. Investigation of Electrical Instabilities and Interface Charge in Zinc Oxide Thin-Film Transistors with High-k Dielectrics. [D] . Siddiqui, Jeffrey Jameel. 2012

机译：高k电介质氧化锌薄膜晶体管的电不稳定性和界面电荷的研究。
6. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric [O] . Yan Shao, Xiaohan Wu, Mei-Na Zhang, 2019

机译：通过使用富氢Al2O3介电层实现具有极低热收支的高性能a-InGaZnO薄膜晶体管
7. Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO-=SUB=-2-=/SUB=-/La-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/HfO-=SUB=-2-=/SUB=- (HLH) Sandwich Gate Dielectrics [O] . L. Ramesh, S. Moparthi, P.K. Tiwari, 2020

机译：用HFO-= sub = -2 - = / sub = - / la-= sub = -2- =的双栅双极层（DG-DAL）薄膜晶体管（TFT）电性能的研究。 / sub = -o- = sub = -3 - = / sub = - / hfo-= sub = -2 - = / sub = - （HLH）三明治栅极电介质

Electrical Degradation Behavior of a-InGaZnO Thin-Film Transistors with Sm_2O_3 Gate Dielectrics

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