GIAXD and XPS Characterization of sp~3C Doped SiC Superhard Nanocomposite Film

摘要

The sp~3C doped SiC superhard nanocomposite films had been deposited on stainless steel (SS) substrates at different temperature by electron beam-physical vapor deposition (EB-PVD). The sp~3C doped SiC film was studied by grazing incidence X-ray asymmetry diffraction (GIAXD), and X-ray photoelectron spectroscopy (XPS). The results of GIAXD showed that the sp~3C doped SiC nanocomposite films were not a perfect crystal, which was composed with fine SiC nanocrystals, and a second phase very similar to diamond like carbon (DLC). XPS analysis showed that the excess C existed in the present films changed from diamond into DLC structure from the surface to inner of the films.