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The Pyrolysis Processing of Polycarbosilane Studied by TG, XRF, IR, XRD, and XPS

机译:TG,XRF,IR,XRD和XPS研究聚碳硅烷的热解工艺

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Polycarbosilane (PCS) is one of precursor systems applied in industry for the Polymer Infiltration Pyrolysis (PIP) processing of C or SiC fiber reinforced SiC matrix composites (C_f/SiC or SiC_f/SiC CMC) materials. In this work, a series of PCS-derived SiC specimens treated at 300, 550, 800, and 1100 °C was studied by XRF, IR, XRD and XPS methods. The results show that a slight amount of PCS molecules with low softening point evaporates below 300 °C; the cross-link between PCS chains takes place to form a 3D -Si-C-Si- network via the reaction between -Si-CH3, -Si-CH2-Si-and -Si-H groups in the temperature range of 300-550 °C; an amorphous phase of SiC was observed when PCS was heated up to 800 °C, which indicates the completion of transformation from organic to inorganic; above 800 °C, β-SiC domain grows. Furthermore, a surface structure evolution of PCS-derived SiC specimens with temperature is proposed after the analyzing the XPS spectra.
机译:聚碳硅烷(PCS)是工业上用于C或SiC纤维增强SiC基复合材料(C_f / SiC或SiC_f / SiC CMC)材料的聚合物渗透热解(PIP)处理的前体系统之一。在这项工作中,通过XRF,IR,XRD和XPS方法研究了一系列在300、550、800和1100°C下处理过的PCS衍生的SiC标本。结果表明,在300°C以下,少量软化点较低的PCS分子蒸发; PCS链之间的交联通过在300-300°C的温度范围内的-Si-CH3,-Si-CH2-Si-和-Si-H基团之间的反应而形成3D -Si-C-Si-网络。 550°C;当PCS加热到800°C时,观察到SiC的非晶相,这表明从有机到无机的转变已经完成。高于800°C时,β-SiC域生长。此外,在分析XPS光谱后,提出了PCS衍生的SiC试样随温度的表面结构演变。

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