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Coupled electrical and thermal 3D IC centric microfluidic heat sink design and technology

机译:耦合的电气和热3D IC中心微流体散热器设计和技术

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Through-silicon via (TSV) technology, an enabler for 3D ICs, has evolved, enabling thinner and shorter TSVs within substantially thinned wafers to achieve faster interconnects, large bandwidth density, and low power consumption. Yet, heat dissipation in 3D ICs becomes more and more challenging, especially in applications that require stacking of multiple processor and memory chips. Microfluidic cooling has been proposed as a solution to reject heat from 3D stacks that contain processor chips. However, current liquid cooling technology inevitably increases the wafer thickness, which is contrary to TSV technology trend. To date, little work has been done to optimize heat sink design to benefit TSV performance, and no attempt has been made to analyze the corresponding impact of a particular heat sink design on the performance of the electrical TSVs. A heat sink design without consideration of TSV performance can greatly diminish the advantages of 3D ICs. This paper presents a holistic cooling solution for 3D ICs, which not only meets thermal requirements, but also minimizes TSV parasitics that impact latency, bandwidth density, and power consumption. This paper will report: a) the design of a 3D-centric heat sink, b) the fabrication of the heat sink and associated high aspect ratio integrated TSVs, c) the thermal testing of the liquid-cooled heat sink and comparison to air-cooled heat sink, and d) the impact of the heat sink geometry on TSV capacitance.
机译:硅通孔(TSV)技术已经发展成为3D IC的使能器,可在大幅减薄的晶片内实现更薄和更短的TSV,从而实现更快的互连,更大的带宽密度和更低的功耗。然而,3D IC的散热变得越来越具有挑战性,特别是在需要堆叠多个处理器和存储芯片的应用中。已经提出了微流体冷却作为解决方案,以排除来自包含处理器芯片的3D堆栈的热量。然而,目前的液体冷却技术不可避免地增加了晶片的厚度,这与TSV技术的发展趋势背道而驰。迄今为止,还没有完成优化散热器设计以提高TSV性能的工作,也没有尝试分析特定散热器设计对电气TSV性能的相应影响。不考虑TSV性能的散热器设计会大大降低3D IC的优势。本文提出了一种用于3D IC的整体冷却解决方案,该解决方案不仅可以满足散热要求,而且还可以最小化影响等待时间,带宽密度和功耗的TSV寄生效应。本文将报告:a)以3D为中心的散热器的设计,b)散热器的制造以及相关的高纵横比集成式TSV,c)液冷散热器的热测试以及与空气冷却的比较d)散热器几何形状对TSV电容的影响。

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