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LSI packaging development for high-end CPU built into supercomputer

机译:超级计算机内置高端CPU的LSI封装开发

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This paper reports on the development of CPU package for the next-generation supercomputer, besides a report of the assembly technology development of a large-scale BGA package that mounts large-scale chip. A large-scale LSI is mounted on CPU package developed this time. The size of a large-scale LSI is about 23.0×23.0mm. In addition, low permittivity (Low-k) material is adopted in interlayer dielectric in wiring layer. Because this Low-k material was fragile, being destroyed by stress that hangs in assembly became a problem. To clear this problem, the kind of the substrate was examined from the coefficient of thermal expansion. Moreover, the confirmation including an enough margin is done. The criterion was decided and the evaluation was executed. As a result, the Low-k layer was able to be prevented being destroyed. Next, it thought the control of void generated when under­fill was filled to be a critical. It is difficult because the chip size is large and there are a lot of numbers of solder bump. Best under-fill is selected an it was applied to this package. Finally, to accommodate to the demand value to severe thermal resistance, Cu-LID was selected as a high heat radiation structure. Additionally, the thermal interface material was adopted between the chip and Cu-LID. The amount of the warpage on the surface of Cu-LID was controlled to about 50 microns by this structure. Moreover, void of the metal joint was not generated, and either the wettability was satisfied. It passes the preprocessing and subsequent environmental test on JEDEC Level-4, and it thinks the package developed this time to be high-quality.
机译:除了报告了安装大型芯片的大型BGA封装的组装技术开发报告之外,本文还报告了下一代超级计算机的CPU封装的开发情况。大型LSI安装在这次开发的CPU封装上。大型LSI的尺寸约为23.0×23.0mm。另外,在布线层的层间电介质中采用低介电常数(Low-k)材料。由于这种Low-k材料易碎,因此在装配时悬挂的应力将其破坏成为问题。为了解决该问题,从热膨胀系数检查了基板的种类。此外,进行了包括足够余量的确认。确定标准并执行评估。结果,可以防止Low-k层被破坏。接下来,它认为控制底部填充时产生的空隙至关重要。这是困难的,因为芯片尺寸很大并且焊料凸点数量很多。选择最佳底部填充并将其应用于此包装。最后,为了适应严重耐热性的需求值,选择了Cu-LID作为高散热结构。另外,在芯片和Cu-LID之间采用了热界面材料。通过这种结构,将Cu-LID表面上的翘曲量控制为约50微米。另外,不会产生金属接缝的空隙,并且满足润湿性。它通过了JEDEC Level-4的预处理和后续环境测试,并且认为这次开发的包装是高质量的。

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