g halogen-free polymer-glass laminates for package substrates. At the same'/> Reliability of fine pitch halogen-free organic substrates for green electronics
首页> 外文会议>61st Electronic Components Technology Conference, 2011 >Reliability of fine pitch halogen-free organic substrates for green electronics
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Reliability of fine pitch halogen-free organic substrates for green electronics

机译:细间距无卤有机基板对绿色电子产品的可靠性

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European Union''s Regulation on halogens and lead-based solders has lead to the development of new class of high Tg halogen-free polymer-glass laminates for package substrates. At the same time, Moore''s law and 3D ICs have accelerated the demand for high I/O density. These fine pitch requirements in new substrates can affect reliability in terms of loss of surface insulation resistance (SIR) and formation of conductive anodic filament (CAF) leading to electrical failures. Therefore newly developed materials are required to have excellent resistance to electrochemical migration and high thermal stability for lead-free assembly. This study focuses on experimental reliability study of novel halogen-free substrates under accelerated conditions. This study consists of 1) SIR test with 50μm line width/spacing, 2) CAF test of through-vias of 100μm diameter with pitch of 250μm and 500μm, 3) through-via reliability and, 4) Pb-free flip-chip package reliability with halogen-free substrates. The halogen-free substrate used in this work was observed to have high resistance to surface migration at 50μm line-width/ spacing. However, CAF failures were observed even at 250μm pitch indicating that failures due to CAF at fine pitch are a serious reliability concern. The substrates did not show any failures in through-vias and flip-chip interconnections under thermal cycling indicating good reliability for halogen-free and Pb-free applications.
机译:欧洲联盟关于卤素和铅基焊料的法规已导致开发用于包装基板的新型高T g 无卤素聚合物玻璃层压板。同时,摩尔定律和3D IC加速了对高I / O密度的需求。新基板中的这些细间距要求会影响表面绝缘电阻(SIR)的损失和形成导电阳极丝(CAF)的可靠性,从而导致电气故障。因此,对于无铅组装,要求新开发的材料具有优异的耐电化学迁移性和高的热稳定性。这项研究的重点是在加速条件下新型无卤基材的实验可靠性研究。该研究包括1)具有50μm线宽/间距的SIR测试,2)直径为100μm,间距为250μm和500μm的贯通孔的CAF测试,3)贯通孔可靠性和4)无铅倒装芯片封装无卤素基材的可靠性。观察到在这项工作中使用的无卤素基板在线宽/线距为50μm时具有很高的抗表面迁移性。然而,即使在250μm的间距下也观察到了CAF故障,这表明在细间距下由于CAF引起的故障是一个严重的可靠性问题。在热循环下,基板在通孔和倒装芯片互连中均未显示任何故障,这表明无卤和无铅应用具有良好的可靠性。

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