首页> 外文会议>61st Electronic Components Technology Conference, 2011 >Thermal modeling for Silicon-on-Sapphire (SOS) based power amplifier design in wireless communication
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Thermal modeling for Silicon-on-Sapphire (SOS) based power amplifier design in wireless communication

机译:无线通信中基于蓝宝石硅(SOS)的功率放大器设计的热模型

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In SOS (Silicon-On-Sapphire) based power amplifier design questions such as how the thermal performance will be after the chip being packaged, how can improvement be made through optimizing device design including the transistor layout, via, trace and I/O pads arrangement etc, are always confronted by device designers. In this paper a novel thermal modeling method has been proposed in which the micro-structures of chip and the macro-structure of package coexist in the model. The impact of device microstructure on thermal dissipation will be reflected in the final package thermal modeling result directly. It is an efficient way to assist device designers to optimize chip design for thermal performance improvement of the final package.
机译:在基于SOS(蓝宝石硅)的功率放大器设计问题中,例如封装芯片后的热性能如何,如何通过优化器件设计(包括晶体管布局,通孔,走线和I / O焊盘)来进行改进布置等总是设备设计人员面临的问题。本文提出了一种新颖的热建模方法,其中芯片的微观结构和封装的宏观结构共存于模型中。器件微结构对散热的影响将直接反映在最终封装的热建模结果中。这是协助设备设计人员优化芯片设计以改善最终封装的热性能的有效方法。

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