CuInSe2 THIN FILMS DEPOSITED ON TRANSPARENT CONDUCTING OXIDE COATED GLASS SUBSTRATES BY SELENIZATION

摘要

CuInSe_2 (CIS) thin films have been obtained by selenization of sequentially evaporated metallic precursor layers with elemental Se vapour at 500°C in flowing Ar. CIS samples have been deposited onto bare and tin-doped indium oxide (ITO), as well as interesting alternative back electrodes as aluminium-doped zinc oxide (AZO) and antimonium-doped tin oxide (ATO)-coated glass substrates. The structural, optical, morphological and electrical properties of the CIS thin films have been studied for different thicknesses and substrates. Polycrystalline CuInSe2 thin films with tetragonal chalcopyrite structure and orientation along the (112) plane have been achieved for all substrates and thicknesses. To growth crystalline semiconductor on highly crystalline substrates promote larger crystallite sizes. The (112) reflection shifts slightly towards higher diffraction angles in CIS deposited on AZO substrates which can be related to Zn incorporation into the selenized films. Similar diffusion of Sn in CIS/ATO samples is observed. The CIS/TCO contacts have exhibited ohmic characteristics in all cases.