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Evaluation Methods of Contamination Flashover Voltage Performance of Cylindrical Type Semi-conducting Glaze Porcelain Insulators

机译:圆柱型半导体釉瓷绝缘子的污闪电压性能评估方法

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Higher contamination flashover voltage of a semi-conducting glaze(SG) insulator owes mainly to the drying effect by leakage current flowing in the glaze. Significant reduction in contamination flashover voltage was confirmed on a cylindrical SG insulator when fog density was increased from 4~5 g/m~3 to 13 g/m~3 in clean fog test. The effect of de-energized time duration between trip-out and re-energization on the contamination flashover voltage of a cylindrical SG insulator under cold-wet switch-on conditions was investigated. The shorter the de-energized time duration, the higher the flashover voltage. Higher contamination design voltages may be adopted even under cold-wet switch-on conditions.
机译:半导体釉(SG)绝缘子的较高污秽闪络电压主要归因于在釉中流动的泄漏电流引起的干燥效应。在纯雾试验中,当雾状密度从4〜5 g / m〜3增加到13 g / m〜3时,圆柱形SG绝缘子的污染闪络电压明显降低。研究了在冷湿接通条件下,脱扣和重新通电之间断电的持续时间对圆柱形SG绝缘子的污染闪络电压的影响。断电持续时间越短,闪络电压越高。即使在冷湿接通条件下,也可以采用更高的污染设计电压。

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