RECENT ADVANCES IN GAP FILLING Cu ELECTROPLATING TECHNOLOGY

摘要

Electroplating of copper (ECD) for ULSI interconnect applications is a new process for semiconductor wafer fabrication. The quality of the copper film and gap filling capability of ECD copper process is superior to any other process available for copper deposition. Organic additives ensure seamless copper fill by promoting growth from the bottom of vias and trenches. We have evaluated two commercial additive systems and discovered that organic additives achieve supper gap filling through different mechanisms. More importantly, the process window for a good gap fill varies with additive systems. The characteristic of organic additives from different manufacturers and their effect on gap fill and planarization of as-deposited copper film will be discussed.