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The failure of punch-through IGBTs to reach forward conduction mode at low temperatures

机译：穿通IGBT在低温下无法达到正向传导模式

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The failure of punch-through (PT) IGBTs to reach forward conduction mode at cryogenic temperatures has already been observed in previous work, but no explanation has been given. In this work detailed experimental data collected for PT IGBTs are presented. The forward conduction drops and switching behavior of the IGBTs are examined over a temperature range from 4.2 to 295 K. The phenomenon under analysis is presented. Connections between the failure of PT-IGBTs and other phenomena are highlighted. Physical behavior at low junction temperatures is analyzed and the failure at cryogenic temperatures is discussed and analyzed.

机译：在以前的工作中已经观察到穿通（PT）IGBT在低温下无法达到正向传导模式，但是没有给出任何解释。在这项工作中，介绍了为PT IGBT收集的详细实验数据。在4.2至295 K的温度范围内检查了IGBT的正向导通压降和开关行为。突出显示了PT-IGBT的故障与其他现象之间的联系。分析了低结温下的物理行为，并讨论和分析了低温下的失效。

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《》|2004年|p.2967-2970|共4页
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Caiafa; A.; Snezhko; A.; Hudgins; J.L.; Santi; E.; Prozorov R;
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中图分类无线电电子学、电信技术;
关键词
insulated gate bipolar transistors; cryogenic electronics; punch-through IGBT; forward conduction mode; cryogenic temperature; forward conduction drop; switching behavior; 4.2 to 295 K;

机译：绝缘栅双极晶体管;低温电子器件;穿通IGBT;正向导通模式;低温温度;正向导通压降;开关行为; 4.2至295 K;

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The failure of punch-through IGBTs to reach forward conduction mode at low temperatures

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