Optical and electrical investigation of dielectric gel behavior under high electrical field

摘要

Today, high voltage power semiconductors such as IGBTs, are being developed. As the voltage is increased, local electric fields applied to dielectric materials also increase. Local deterioration of dielectric materials due to partial discharges (PD) may appear and affect the reliability of the whole component. The usual way to detect PD's under ac voltage via electrical measurements is no longer applicable with the pulsed voltage wave shape encountered in power semiconductor applications. This paper presents investigations carried out with optical measurements of PD's in silicone gels, in a typical IGBT module structure. In addition, a very faint light emission is detected below the PD inception voltage. This light can presumably be attributed to an electroluminescence phenomena, such as previously reported in solids or aromatic liquids, and can constitute a non destructive technique that allows to detect the existence of local high fields in the gel.