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Complex permittivity measurements at variable temperatures of low loss dielectric substrates employing split post and single post dielectric resonators

机译:使用分立柱式和单柱式介质谐振器的低损耗介质基板在可变温度下的复电容率测量

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A split post dielectric resonator in a copper enclosure and a single post dielectric resonator in a cavity with superconducting end-plates have been constructed and used for the complex permittivity measurements of single crystal substrates. (La,Sr)(Al,Ta)O/sub 3/, LaAlO/sub 3/, MgO and quartz substrates have been measured at temperatures from 20 K to 300 K in the split post resonator and from 15 K to 80 K in the single post resonator. The TE/sub 01/spl delta// mode resonant frequencies and unloaded Q/sub 0/-factors of the empty resonators at temperature of 20 K were: 9.952 GHz and 25,000 for the split post resonator and 10.808 GHz and 240,000 for the single post resonator respectively.
机译:铜外壳中的分立柱式介质谐振器和带超导端板的空腔中的单柱式介质谐振器已被构建并用于单晶衬底的复介电常数测量。 (La,Sr)(Al,Ta)O / sub 3 /,LaAlO / sub 3 /,MgO和石英衬底的测量温度为20 K至300 K(在分体式谐振器中)和15 K至80 K(在)单柱谐振器。温度为20 K时空谐振腔的TE / sub 01 / spl delta //模式谐振频率和空载Q / sub 0 /因子分别为:分离柱谐振腔为9.952 GHz和25,000,单个谐振腔为10.808 GHz和240,000后谐振器。

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