A high frequency high power n-channel VDMOSFET suitable for use in plasma generation, excitation, aural power amplifiers of the VHF television transmitters and FM broadcasting transmitters was designed and fabricated. Terraced gate structure and refractory molybdenum (Mo) gate electrodes are employed for reduction of gate-drain capacitance (Cgd) and gate series resistance. Parallel operation of the MOSFET has been successfully achieved to delivered output power of 450 W with 13.7 dB gain and 74% drain efficiency at V/sub DS/=50 V f=175 MHz, 600 /spl mu/s pulse width, 20% duty cycle. The output power of 700 W with 16.6 dB gain and 70% drain efficiency has been obtained at f=100 MHz under the same conditions.
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机译：设计并制造了适用于VHF电视发射器和FM广播发射器的等离子体产生，激励，音频功率放大器的高频大功率n沟道VDMOSFET。采用阶梯式栅极结构和难熔钼（Mo）栅电极来降低栅漏电容（Cgd）和栅串联电阻。在V / sub DS / = 50 V f = 175 MHz，600 / spl mu / s脉冲宽度，20％的情况下，已成功实现MOSFET的并联操作，以提供450 W的输出功率，13.7 dB的增益和74％的漏极效率。占空比。在相同条件下，在f = 100 MHz时获得了700 W的输出功率，具有16.6 dB的增益和70％的漏极效率。
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