Monolithically integrated power device consisting of a GAT and a MPS diode with increased switching speed

摘要

A new integrated power device structure, which puts together a gate associated transistor (GAT) and a merged pin Schottky (MPS) diode, is proposed. It is verified by simulations and experiments that the new structure has gained both the faster recovery speed of the diode and the faster switching speed of the transistor compared to that of the conventional structure consisting of a traditional power bipolar junction transistor (BJT) and a p-i-n diode. The new structure can be realized in an ordinary planar process, and the fast switching speed can be achieved at low cost without the need for special carrier-lifetime-controlling techniques such as Pt doping.