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Effect of the Hydrophilic-Lipophilic Balance (HLB) of Surfactants Included in the Post-CMP Cleaning Chemicals on Porous SiOC Direct CMP

机译:CMP后清洁化学品中所含表面活性剂的亲水亲油平衡(HLB)对多孔SiOC直接CMP的影响

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To reduce the effective k-value for the 45-nm node, direct CMP of a porous SiOC film without a protective cap layer is required. The hydrophilic-lipophilic balance (HLB) of a surfactant included in the post-CMP cleaning chemical was found to be a parameter that determines SiOC film damage and cleaning ability after direct CMP. To suppress the k-value increase and watermark generation, we need to reduce the chemical and mechanical stress of the barrier metal CMP slurry and brush scrub cleaning. Moreover, IPA (or glycolether) cleaning and H2/He remote plasma treatment are an effective restoring treatment after direct CMP.
机译:为了降低45 nm节点的有效k值,需要不带保护盖层的多孔SiOC薄膜直接进行CMP。发现在CMP后的清洁剂中包括的表面活性剂的亲水-亲脂平衡(HLB)是决定直接CMP后SiOC膜的损坏和清洁能力的参数。为了抑制k值的增加和水印的产生,我们需要减少金属阻挡层CMP浆料的化学应力和机械应力,并进行刷子擦洗清洁。此外,IPA(或乙二醇醚)清洗和H2 / He远程血浆处理是直接CMP后的有效恢复处理。

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