CD engagement of critical parameters in chemically amplified resists process and advanced mask lithography using 50keV electron beam

摘要

Chemically amplified resist (CAR) is proven to have high resolution of 100 nm on the mask using 50 keV electron beam. Conveniently, PEB temperature, time and dose should be optimized to bring about stable cross-linking, and the process must be controlled to keep up good CD uniformity. CAR resist has intrinsic characteristics that act on temperature or energy differently each other as a chemistry of resist. Moreover, mask processes are reacted very differentially because different material, tool, and environment should be used in the process. In this paper, process and tool parameters are analyzed and optimized to get high performance for 65nm node technology, which can affect on CD and its signatures.