Nano-meter electrode fabrication technology using anodic oxidation resist and application to 20 GHz-range SAW devices

摘要

Nano-meter lithography technology is very important for high density integrated circuits and higher frequency-range SAW devices. The frequency ranges of mobile communication systems are now around 1 GHz and are extending to 2/spl sim/4 GHz. Moreover SAW devices require a frequency range of around 10 GHz. The authors propose new lithography techniques of below 0.05 /spl mu/m electrode width. The electrodes are fabricated by using very thin anodic oxidation films as a resist and wet or dry etching techniques. The results show 0.075 /spl mu/m width IDTs with thickness of about 0.03 /spl mu/m on 128/spl deg/ Y-X LiNbO/sub 3/. SAW experimental results show the 20 GHz-range characteristics. Also, new lithography technologies are applied to 2 GHz low loss filters using a unidirectional transducer.