Improving amorphous selenium photodetector performance using an organic semiconductor

摘要

In this paper, a thin layer of perylene tetracarboxylic bisbenzimidazole (PTCBI) is investigated as a potential hole-blocking contact in an a-Se photodetector. The behavior of the device was characterized as a function of electric field under light and dark conditions. It was found that the PTCBI layer permits operation at high electric fields (＞＞10 Worn) while maintaining a dark current density below 200 pA/mm~2 . Short pulse experiments were performed to assure that charge accumulation at the organic/a-Se interface is negligible and does not reduce the electric field in the a-Se layer. The detector investigated uses a simple low temperature fabrication process based on widely available semiconductor materials that can be easily integrated into current large area digital imager manufacturing processes.