Fabrication of Current-Perpendicular-to-Plane Junctions Based on Fe_3Si/FeSi_2 Multilayered Films by Lift-Off

摘要

Current-perpendicular-to-plane (CPP) junctions comprising Fe_3Si/FeSi_2 multilayers were prepared by a lift-off process combined with lithography techniques. The Fe_3Si/FeSi_2 multilayered films were grown on Si (111) substrates at room temperature by facing-targets direct-current sputtering. From the X-ray diffraction measurements, it was confirmed that the Fe_3Si layers were epitaxially grown from the first layer on Si (111) up to the top layer across the FeSi_2 layers with the same orientation relationship as that in the first layer. The CPP junctions, wherein ferromagnetic interlayer coupling across the FeSi_2 spacer layers was induced, exhibited an obvious change in the electrical resistance for the current injection, which might be due to current-induced magnetization switching.