A Metal Oxide Antifuse-Diode Device

摘要

A new type of high-k dielectric based device that has both antifuse and diode functions is reported. The device has a large '"programmed" to "unprogrammed" leakage current ratio suitable for "one-time programmed" memory operation. It can limit the current flow direction, which is good for switching purpose. This metal-resistor-semiconductor device has the "gray-scale" capability similar to that of the MOSFET. The operation principle and parameters influencing the device performer have been discussed. There are many possible applications of this new type of device.