State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes

摘要

We present state-of-the-art performance from green, blue, and violet InGaN-based laser diodes fabricated on nonpolar and semipolar GaN substrates. Using these novel crystal orientations, we demonstrate high power, high efficiency, continuous-wave operation from single-lateral-mode electrically pumped laser diodes at wavelengths from 405 nm to 500 nm. Additionally, we present the longest reported continuous-wave lasing demonstration of 525 nm and an output power of over 9 mW at 521 nm. Wall-plug efficiencies of over 25% in the violet region, 17.5% in the blue region, over 5% at 472nm, and 2.2% in the 500 nm range are reported. These InGaN-based devices offer dramatic improvement in size, weight, and cost over conventional gas and solid state lasers and may enable a variety of new applications in defense and security.