Characterization of Conductivity in Single Crystal TIBr

摘要

T1Br is an ionic material with good potential for use in high energy radiation detectors because of its relatively large band gap and heavy elements. In these sensors, incident radiation excites electron hole pairs that are collected as the response, and the mobility-lifetime product for electrons and holes, as well as low dark current are common figures of merit. T1Br reportedly displays ionic conductivity that leads to undesirable leakage, or dark current thereby reducing sensor response. This work focuses on the development of a defect and transport model appropriate to T1Br. The derived enthalpies of migration and Schottky defect formation are compared with literature values.