【24h】

Root Cause Analyses of Metal Bridging for Copper Damascene Process

机译:铜镶嵌工艺金属桥接的根本原因分析

获取原文
获取原文并翻译 | 示例

摘要

New process will introduce new failure mechanisms during microelectronic device manufacturing. Even if the same defect, its root causes can be different for different processes. For aluminum(Al)-tungsten(W) metallization, the root cause of metal bridging is quite simple and mostly it is blocked etch or under-etch. But, for copper damascene process, the root causes of metal bridging are complicated. This paper has discussed the various root causes of metal bridging for copper damascene process, such as those related to litho-etch issue, copper CMP issue, copper corrosion issue and so on.
机译:新工艺将在微电子器件制造过程中引入新的故障机制。即使相同的缺陷,其根本原因对于不同的过程也可能有所不同。对于铝(Al)-钨(W)的金属化,金属桥接的根本原因非常简单,并且大多数情况下是阻塞蚀刻或欠蚀刻。但是,对于铜镶嵌工艺,金属桥接的根本原因很复杂。本文讨论了铜镶嵌工艺中金属桥接的各种根本原因,例如与光刻蚀问题,铜CMP问题,铜腐蚀问题等有关的原因。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号