NEW PHYSICS FOR MODELING TRANSIENT ENHANCED DIFFUSION IN RTP

摘要

Use of fast ramps for making ultrashallow junctions in transistor devices raises the possibility that new physical effects connected with intense illumination and surface proximity need to be incorporated into models for transient enhanced diffusion (TED). This work examines three such potential effects for the point defects (vacancies and interstitials) that help mediate TED of boron: (1) enhancement of defect diffusion by photogenerated electron-hole recombination, (2) modified charge state statistics of defects by photogenerated carriers, and (3) variable rates of defect incorporation at the surface. We conclude that, while all these effects probably operate, only the last probably carries significant potential for modifying diffused profiles.