Optimization of Resistive Reading Probe for Electric Data Storage System with a bit of 50nm

摘要

This paper deals with a practical methodology to optimize a reading probe of data storage devices using polarization in electric field. The polarization direction at probe pole tip and the angle between a probe and a medium are adopted and identified as significant design variables. The proposed sensitivity function and optimum resistive reading probe shape in the electric recording devices could be obtained by using Response Surface Method and Finite Element Method.